By Andrei Grebennikov, Narendra Kumar, Binboga S. Yarman
Broadband RF and Microwave Amplifiers offers wide insurance of broadband radio frequency (RF) and microwave energy amplifier layout, together with recognized historic and up to date novel schematic configurations, theoretical methods, circuit simulation effects, and sensible implementation options. The textual content starts through introducing two-port networks to demonstrate the habit of linear and nonlinear circuits, explaining the elemental ideas of energy amplifier layout, and discussing impedance matching and broadband strength amplifier layout utilizing lumped and disbursed parameters. The e-book then:
- Shows how dissipative or lossy gain-compensation-matching circuits can provide a massive trade-off among strength achieve, mirrored image coefficient, and working frequency bandwidth
- Describes the layout of broadband RF and microwave amplifiers utilizing actual frequency options (RFTs), delivering a variety of examples in line with the MATLAB® programming process
- Examines Class-E energy amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications
Broadband RF and Microwave Amplifiers combines theoretical research with useful layout to create a superior origin for leading edge principles and circuit layout techniques.
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Additional info for Broadband RF and Microwave Amplifiers
180) where Nadd1 and Nadd2 are the additional noise powers added by the first and second stages, respectively. 182) which means that the noise figure of the first stage has the predominant effect on the overall noise figure, unless GA1 is small or F2 is large . References 1. L. O. Chua, C. A. Desoer, and E. S. Kuh, Linear and Nonlinear Circuits, New York: McGraw-Hill, 1987. 2. D. M.
However, in a quasistatic approximation, which gives sufficiently accurate results as long as the height of the dielectric substrate is very small compared with the wavelength, it is possible to obtain the explicit analytical expressions for its electrical characteristics. Since a microstrip line is an open structure, it has a major fabrication advantage over the stripline due to simplicity of practical realization, interconnection, and adjustments. The exact expression for the characteristic impedance of a lossless microstrip line with finite strip thickness is given by [18,19] 60 8 h We ln + We 4 h ε re Z0 = −1 We 120π We + 1 .
2 Microstrip Line Planar transmission lines as an evolution of the coaxial and parallel-wire lines are compact and readily adaptable to hybrid and monolithic integrated circuit fabrication technologies at RF and microwave frequencies . 17. Such a configuration is equivalent to a pair-wire system for the image of the conductor in the ground plane, which produces the required symmetry . In this case, the electric and magnetic field lines are located in both the dielectric region between the strip conductor and the ground plane and in the air region above the substrate.