By Jiann-Shiun Yuan
The topic of this publication is CMOS RF circuit layout for reliability. The gadget reliability and strategy edition matters on RF transmitter and receiver circuits might be specific curiosity to the readers within the box of semiconductor units and circuits. This proposed e-book is exclusive to discover common reliability matters within the gadget and know-how point after which to check their impression on RF instant transceiver circuit functionality. Analytical equations, experimental facts, equipment and circuit simulation effects may be given for transparent rationalization. the most gain the reader derive from this ebook could be transparent realizing on how machine reliability matters impacts the RF circuit functionality subjected to operation getting older and strategy variations.
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Additional info for CMOS RF Circuit Design for Reliability and Variability
References 1. Ng WL, Luong HC (2007) A 1-V 17-GHz 5-mW CMOS quadrature VCO based on transformer coupling. IEEE J Solid State Circ 42:1933–1941 2. 2 mW 7 GHz CMOS quadrature VCO using current-reuse and cross-coupled transformer-feedback technology. IEEE Microwave Wireless Compon Lett 18:698–700 3. Chuang YH, Lee S-H, Yen R-H, Jang S-L, Lee J-F, Juang M-H (2006) A wide locking range and low voltage CMOS direct injection-locked frequency divider. IEEE Microwave Wireless Compon Lett 16:299–301 4. Lee S-H, Jang S-L, Chuang Y-H, Chao J-J, Lee J-F, Jung M-H (2007) A low power injection locked LC-tank oscillator with current reused topology.
The current reused VCOs can operate with only half the amount of DC current compared to those of the conventional VCO topologies . For instance, during the ﬁrst half period, both n- and p-channel transistors are on and the current flows from VDD to ground through the tuning inductor. During the second half period, the two transistors are off and the current flows in the opposite direction through the capacitors. The output buffers are used to improve the pull effect resulted from various load.
Brederlow R, Weberm W, Scgnjutt-Landsiedel D, Thewes R (2002) Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions. IEEE Trans Electron Devices 49:1588–1596 13. Kolhatkar J, Hoekstra E, Hof A, Salm C, Schmitz J, Wallinga H (2005) Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation. IEEE Electron Devices Lett 26:764–766 14. Reddy V, Barton N, Martin S, Hung CM, Krishnan A, Chancellor C, Sundar S, Tsao A, Corum D, Yanduru N, Madhavi S, Akhtar S, Pathak N, Srinivasan P, Shichijo S, Benaissa K, Roy A, Chatterjee T, Taylor R, Krick J, Brighton J, Ondrusek J, Barry D, Krishnan S (2009) Impact of transistor reliability on RF oscillator phase noise degradation.